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inchange semiconductor product specification 1 silicon npn power transistors 2SC5101 description ? ? with to-3pml package ? complement to type 2sa1909 applications ? audio and general purpose pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 140 v v ebo emitter-base voltage open collector 6 v i c collector current 10 a i b base current 4 a p c collector power dissipation t c =25 ?? 80 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC5101 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma; i b =0 140 v v cesat collector-emitter saturation voltage i c =5 a;i b =0.5 a 0.5 v i cbo collector cut-off current v cb =200v ;i e =0 10 | a i ebo emitter cut-off current v eb =6v; i c =0 10 | a h fe dc current gain i c =3a ; v ce =4v 50 180 f t transition frequency i e =-0.5a ; v ce =12v 20 mhz c ob output capacitance i e =0; v cb =10v;f=1mhz 250 pf switching times t on turn-on time 0.24 | s t s storage time 4.32 | s t f fall time i c =5a;r l =12 |? i b1 =-i b2 =0.5a v cc =60v 0.40 | s ? h fe classifications o p y 50-100 70-140 90-180
inchange semiconductor product specification 3 silicon npn power transistors 2SC5101 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2SC5101

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